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STGF19NC60HD STMicro IGBT

STGF19NC60HD

  • Model: STGF19NC60HD
  • 411 Units in Stock
  • Manufactured by: STMicro

Description of STGF19NC60HD

Description

This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Key Parameters

Absolute maximum ratings
SymbolParameterValueUnit
TO-220
D²PAK		TO-220FPTO-247
VCESCollector-emitter voltage (VGE = 0)600V
IC(1)Collector current (continuous) at
TC = 25 °C		401642A
IC(1)Collector current (continuous) at
TC = 100 °C		191021A
ICL(2)Turn-off latching current40A
ICP(3)Pulsed collector current60A
IFDiode RMS forward current at
TC = 25 °C		20A
IFSMSurge not repetitive forward current
tp=10 ms sinusoidal		50A
VGEGate-emitter voltage±20V
PTOTTotal dissipation at TC = 25 °C13032140W
VISOIsolation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) 2500 V
TjOperating junction temperature– 55 to 150°C

1. Calculated according to the iterative formula:

IC(TC) =                    Tj(max)– TC                         
              Rthj – c × VCE(sat)(max)(Tj(max), IC(TC))

2. Vclamp=80%VCES, TJ= 150 °C, RG =1 0 Ω, VGE = 15 V

3. Pulse width limited by maximum permissible junction temperature and turn-off within RBSOA


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