Description of STGF19NC60KD
Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
Key Parameters
Absolute maximum ratings| Symbol | Parameter | Value | Unit |
D2PAK TO-220 | TO-220FP | |
| VCES | Collector-emitter voltage (VGE = 0) | 600 | V |
| IC(1) | Collector current (continuous) at TC = 25 °C | 35 | 16 | A |
| IC(1) | Collector current (continuous) at TC = 100 °C | 20 | 10 | A |
| ICL(2) | Turn-off latching current | 75 | A |
| ICP(3) | Pulsed collector current | 75 | A |
| VGE | Gate-emitter voltage | ±20 | V |
| IF | Diode RMS forward current at TC = 25 °C | 20 | A |
| IFSM | Surge non repetitive forward current tp = 10 ms sinusoidal | 50 | A |
| PTOT | Total dissipation at TC = 25 °C | 125 | 32 | W |
| tscw | Short circuit withstand time, VCE = 0.5 V(BR)CES Tj = 125 °C, RG = 10 Ω, VGE = 12 V | 10 | | μs |
| Tj | Operating junction temperature | – 55 to 150 | °C |
1. Calculated according to the iterative formula:
IC(TC) =