Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.

Key Parameters

Absolute Maximum ratings

Symbol	Parameter	Value		Unit
Symbol	Parameter	STGP7NC60HD STGB7NC60HD	STGF7NC60HD	Unit
V_ces	Collector-Emitter Voltage (V_GS = 0)	600		V
V_ecr	Emitter-Collector Voltage	20		V
V_ge	Gate-Emitter Voltage	±20		V
I_C	Collector Current (continuous) at T_C = 25°C (#)	25	10	A
I_C	Collector Current (continuous) at T_C = 100°C (#	14	6	A
I_CM ⁽⁾	Collector Current (pulsed)	50		A
I_F	Diode RMS Forward Current at T_C = 25°C	20		A
Ptot	Total Dissipation at T_C = 25°C	80	25	W
	Derating Factor	0.64	0.20	W/°C
Viso	Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C)	--	2500	V
Tstg	Storage Temperature	– 55 to 150		°C
T_j	Operating Junction Temperature	– 55 to 150		°C