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STGF8NC60KD STMicro IGBT

STGF8NC60KD

  • Model: STGF8NC60KD
  • 237 Units in Stock
  • Manufactured by: STMicro

Description of STGF8NC60KD

Description

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Key Parameters

Absolute maximum ratings
SymbolParameterValueUnit
D²PAK
TO-220		DPAKTO-220FP
VCESCollector-emitter voltage (VGE = 0)600V
IC(1)Collector current (continuous) at TC = 25 °C1`57A
IC(1)Collector current (continuous) at TC = 100 °C84A
ICL(2)Turn-off latching current30A
ICP(3)Pulsed collector current30A
VGEGate-emitter voltage±20V
IFDiode RMS forward current at TC = 25 °C7A A
IFSMSurge not repetitive forward current tp = 10 ms sinusoidal20A
VISOInsulation withstand voltage (RMS) from all three leads to external hea sink ( t=1 s; TC = 25 °C)----2500V
PTOTTotal dissipation at TC = 25 °C656224W
TjOperating junction temperature– 55 to 150°C
T scw

Short circuit withstand time (VCE = 0.5 VBR(CES) , TC = 125 °C, RG = 10 ?, VGE = 12 V)

 
10µs

1. Calculated according to the iterative formula:

IC(TC) =                 TJMAX – TC                
              RTHJ – C × VCESAT(MAX)(TC, IC)

2. Vclamp = 80% (VCES), VGE=15 V, RG=10 Ω, TJ=150 °C
3. Pulse width limited by max junction temperature allowed


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