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STGP10NB37LZ STMicro IGBT

STGP10NB37LZ

  • Model: STGP10NB37LZ
  • 240 Units in Stock
  • Manufactured by: STMicro

Description of STGP10NB37LZ

Description

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. The built in collector-gate Zener exhibits a very precise active clamping while the gateemitter Zener supplies an ESD protection.

Key Parameters

Absolute maximum ratings
SymbolParameterValueUnit
VCESCollector-emitter voltage (VGE = 0)VCES (clamped)V
VECSEmitter collector voltage (VGE = 0)18V
IC(1)Collector current (continuous) at TC = 25 °C20A
IC(1)Collector current (continuous) at TC = 100 °C10A
ICP(2)Pulsed collector current40A
ICL(3)Turn-off latching current40A
VGEGate-emitter voltageVGE (clamped)V
PTOTTotal dissipation at TC = 25 °C125W
ESD(HBM)Electrostatic sensitive discharge, human body model applied to all three pins (C=100 pF, R=1.5 k?)4kV
EASSingle pulse energy at TC = 25 °C300mJ
TstgStorage temperature– 65 to 175°C
TjOperating junction temperature

1. Calculated according to the iterative formula:

IC(TC) =                    Tj(max)– TC                         
              R


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