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STGP10NC60KD STMicro IGBT

STGP10NC60KD

  • Model: STGP10NC60KD
  • 251 Units in Stock
  • Manufactured by: STMicro

Description of STGP10NC60KD

Description

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Key Parameters

Absolute maximum ratings
SymbolParameterValueUnit
D²PAK
TO-220
DPAKTO-220FP
VCESCollector-emitter voltage (VGE = 0)600V
IC(1)Continuous collector current at TC = 25°C209A
IC(1)Continuous collector current at TC = 100°C106A
ICL(2)Turn-off latching current30A
ICP(3)Pulsed collector current30A
VGEGate-emitter voltage±20V
IFDiode RMS forward current at Tc=25°C10A
IFSMSurge non repetitive forward current Tp = 10 ms
sinusoidal
20A
PTOTTotal dissipation at TC = 25°C656225W
VISOInsulation withstand voltage (RMS) from all three
leads to external heat sink (t=1s;TC=25°C)
--2500V
tscwShort-circuit withstand time
VCE = 0.5 VCES, Tj = 125 °C, RG = 10 Ω, VGE = 12 V
10μs
TstgStorage temperature– 55 to 150°C
TjOperating junction temperature

1. Calculated according to the iterative formula

IC(TC) =                    Tj(max)– TC                         
              Rthj – c × VCE(sat)(max)(Tj(max), IC(TC))

2. Vclamp = 80 % VCES, VGE = 15 V, RG = 10 Ω, TJ = 150 °C

3. Pulse width limited by maximum junction temperature and turn-off within RBSOA


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