Description of STGP14NC60KD
Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
Key Parameters
Absolute maximum ratings
| Symbol | Parameter | Value | Unit |
| TO-220/D²PAK | TO-220FP |
| VCES | Collector-emitter voltage (VGE = 0) | 600 | V |
| IC(1) | Continuous collector current at TC = 25 °C | 25 | 11 | A |
| IC(1) | Continuous collector current at TC = 100 °C | 14 | 7 | A |
| ICL(2) | Turn-off latching current | 50 | A |
| ICP(3) | Pulsed collector current | 50 | A |
| VGE | Gate-emitter voltage | ±20 | V |
| IF | Diode RMS forward current at TC = 25 °C | 50 | A |
| IFSM | Surge non repetitive forward current tp = 10 ms sinusoidal | 20 | A |
| VISO | Insulation withstand voltage (RMS) from all three leads to external hea sink ( t=1 s; TC = 25 °C) | -- | 2500 | V |
| PTOT | Total dissipation at TC = 25 °C | 80 | 28 | W |
| tscw | Short circuit withstand time, VCE = 0.5VBR(CES) , TC = 125 °C, RG = 10 Ω, VGE = 12 V | 10 | μs |
| Tj | Operating junction temperature | – 55 to 150 | °C |