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STGW40NC60KD STMicro IGBT

STGW40NC60KD

  • Model: STGW40NC60KD
  • 257 Units in Stock
  • Manufactured by: STMicro

Description of STGW40NC60KD

Description

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Key Parameters

Absolute maximum ratings
SymbolParameterValueUnit
VCESCollector-emitter voltage (VGE = 0)600V
IC(1)Collector current (continuous) at TC = 25 °C70A
IC(1)Collector current (continuous) at TC = 100 °C38A
ICL(2)Turn-off latching current220A
ICP(3)Pulsed collector current220A
VGEGate-emitter voltage±20V
IFDiode RMS forward current at TC = 25 °C30A
IFSMSurge non repetitive forward current tp = 10 ms sinusoidal120A
PTOTTotal dissipation at TC = 25 °C250W
tscwShort circuit withstand time, VCE = 0.5 V(BR)CES Tj = 125°C, RG = 10 Ω, VGE = 12 V10μs
TjOperating junction temperature– 55 to 150°C


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