Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “V” identifies a family optimized for high frequency.

Key Parameters

Absolute Maximum ratings

Symbol	Parameter	Value	Symbol
V_CES	Collector-Emitter Voltage (V_GS = 0)	600	V
V_ECR	Reverse Battery Protection	20	V
V_GE	Gate-Emitter Voltage	± 20	V
I_C	Collector Current (continuous) at 25°C (#)	80	A
I_C	Collector Current (continuous) at 100°C (#)	50	A
I_CM ⁽¹⁾	Collector Current (pulsed)	200	A
P_TOT	Total Dissipation at T_C = 25°C	260	W
	Derating Factor	2.08	W/°C
T_stg	Storage Temperature	– 55 to 150	°C
T_j	Operating Junction Temperature	– 55 to 150	°C