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Fuji

Fuji Electric Co.,LTD

Fuji Electric Device technology (FDT) began producing and marketing IGBTs (insulated gate bipolar transistors) in 1988 and has been supplying them to the market ever since. FDT succeeded in enhancing the characteristics of the first three IGBT generations, by using epitaxial wafers, optimizing the lifetime control techniques, and by applying fine patterning technology. The company was able to significantly enhance the characteristics of the fourth and fifth generations by switching from epitaxial wafers to FZ (floating zone) wafers. This achievement brought about a revolutionary transition in conventional approaches to IGBT design.

Fuji IGBT series products

Fuji IGBT Modules PIM
Fuji IGBT Modules 6-Pack
Fuji IGBT Modules 4-Pack
IGBT Modules 2-Pack
Fuji IGBT Modules 1-Pack
Fuji IGBT Modules IPM
Fuji IGBT Discrete

Fuji IGBT Modules now in stock - IGBT Express stocks an extensive and comprehensive line of Fuji igbt modules for most industrial applications - one of hundreds of categories of industrial and electronic products in stock.

Whether you need Fuji igbt modules or something else, IGBT Express should be your first choice for IGBT electronic components. We make it easy to find the exact fuji igbt module you need. 




Product Image Item Name Stock- Price
7MBR75U4B120

7MBR75U4B120

329

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2MBI650VXA-170E-50

2MBI650VXA-170E-50

Insulated Gate Bipolar Transistor, 900A I(C), 1700V V(BR)CES, N-Channel
328
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7MBR75SB060

7MBR75SB060

KEY PARAMETERS ABSOLUTE MAXIMUM RATINGS (Tj=25oC, unless otherwise noted)SymbolParameterConditionsRatingsUnitVCEX (SUS)Collector-emitter...
327

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7MBR50SB120

7MBR50SB120

DESCRIPTION Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to...
325

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7MBR150VR120-50

7MBR150VR120-50

324

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7MBR35UA120

7MBR35UA120

KEY PARAMETERS ABSOLUTE MAXIMUM RATINGS (Tj=25oC, unless otherwise noted)SymbolParameterConditionsRatingsUnitVCEX (SUS)Collector-emitter...
322

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7MBR30SC060

7MBR30SC060

320

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6MBI75UC-120

6MBI75UC-120

Description Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to...
319

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7MBP50TEA120

7MBP50TEA120

KEY PARAMETERS ABSOLUTE MAXIMUM RATINGS (Tj=25oC, unless otherwise noted)SymbolParameterConditionsRatingsUnitVCEX (SUS)Collector-emitter...
318

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7MBR30NE-060

7MBR30NE-060

317

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6MBI75F-060

6MBI75F-060

Description Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to...
316

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7MBP50TEA060

7MBP50TEA060

KEY PARAMETERS ABSOLUTE MAXIMUM RATINGS (Tj=25oC, unless otherwise noted)SymbolParameterConditionsRatingsUnitVCEX (SUS)Collector-emitter...
315

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6DI30B-050

6DI30B-050

Manufacturer :IXYS RoHS : Product :IGBT Silicon Modules Configuration :Quad Collector- Emitter Voltage VCEO Max :600 V Continuous Collector Current...
314

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6MBI50FA-060

6MBI50FA-060

Description Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge...
313

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7MBP50RTA060

7MBP50RTA060

Description Powerex Intellimod-3 Modules are designed applications requiring a high frequency (20kHz) output switching inverter. The modules are...
312

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4MBI150T-060

4MBI150T-060

Description Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge...
311

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6MBI450U4-170

6MBI450U4-170

Description M57962L is a hybrid integrated circuit designed for driving n-channel IGBT modules in any gate amplifier application. This device...
310

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7MBP25RU2A120

7MBP25RU2A120

309

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2MBI50P-140

2MBI50P-140

308

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6MBI450U-170

6MBI450U-170

307

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6RI75E060

6RI75E060

306

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2MBI50L-120

2MBI50L-120

Description Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge...
305

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6MBI30FA-060

6MBI30FA-060

304

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6RI30G-120

6RI30G-120

Key Parameters Absolute Maximum Ratings, Tj = 25 °C Unless Otherwise SpecifiedSymbolParameterConditionsRatingsUnitVCESCollector-emitter...
303

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2MBI450UE-120

2MBI450UE-120

Manufacturer :IXYS RoHS : Product :IGBT Silicon Modules Configuration :Single Collector- Emitter Voltage VCEO Max :1200 V Continuous Collector...
302

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6MBI25S-120

6MBI25S-120

Manufacturer :IXYS RoHS : Product :IGBT Silicon Modules Configuration :Single Collector- Emitter Voltage VCEO Max :1200 V Continuous Collector...
301

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6MBP50RJ120

6MBP50RJ120

Manufacturer :IXYS RoHS : Product :IGBT Silicon Modules Configuration :Single Collector- Emitter Voltage VCEO Max :1200 V Continuous Collector...
300

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2MBI400U4H-120

2MBI400U4H-120

Manufacturer :IXYS RoHS : Product :IGBT Silicon Modules Configuration :Single Collector- Emitter Voltage VCEO Max :1200 V Continuous Collector...
299

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6MBI150FB-060

6MBI150FB-060

Manufacturer :IXYS RoHS : Product :IGBT Silicon Modules Configuration :Single Collector- Emitter Voltage VCEO Max :1200 V Continuous Collector...
298

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6MBP40RUB060-01

6MBP40RUB060-01

Manufacturer :IXYS RoHS : Product :IGBT Silicon Modules Configuration :Single Collector- Emitter Voltage VCEO Max :1200 V Continuous Collector...
297

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