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Description Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a... |
398 |
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Manufacturer :Infineon Product :IGBT Silicon Modules Configuration :Array 7 Collector- Emitter Voltage VCEO Max :1200 V Continuous Collector Current... |
397 |
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Description Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three... |
396 |
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Manufacturer :Infineon Product :IGBT Silicon Modules Configuration :Dual Collector- Emitter Voltage VCEO Max :1200 V Continuous Collector Current at... |
395 |
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ParametricsFF900R12IP4DVConfigurationDualDimensions (width)89 mmDimensions (length)172 mmHousingPrimePACK™ 2IC(nom) /... |
394 |
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Description The Powerex POW-R-PAKTM is a configurable IGBT based power assembly that may be used as a converter, chopper, half or full bridge, or... |
394 |
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Manufacturer :Infineon Product :IGBT Silicon Modules Standard Pack Qty :10 |
393 |
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Description Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a... |
393 |
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Manufacturer :Infineon Product Category :IGBT Modules RoHS :No Product :IGBT Silicon Modules Configuration :Single Collector- Emitter Voltage VCEO... |
392 |
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Manufacturer :Infineon |
391 |
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Description Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a... |
391 |
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Description HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module Key ParametersMaximum... |
388 |
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Manufacturer :Infineon Product Category :IGBT Modules RoHS :No Product :IGBT Silicon Modules Configuration :Hex Collector- Emitter Voltage VCEO Max... |
385 |
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Manufacturer :Infineon Product Category :IGBT Modules RoHS :No Product :IGBT Silicon Modules Configuration :Dual Collector- Emitter Voltage VCEO Max... |
384 |
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CategoriesDiscrete Semiconductor ProductsTransistors - IGBTs - ModulesManufacturerInfineon TechnologiesSeries-Part StatusActiveIGBT TypeTrench Field... |
383 |
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Manufacturer :Infineon Product :IGBT Silicon Modules Configuration :Hex Collector- Emitter Voltage VCEO Max :1200 V Continuous Collector Current at... |
382 |
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Manufacturer :Infineon |
381 |
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Description Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single... |
379 |
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Manufacturer :Infineon |
378 |
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Manufacturer :Infineon |
376 |
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Manufacturer :Infineon Product :IGBT Silicon Modules Configuration :Quad Collector- Emitter Voltage VCEO Max :1200 V Continuous Collector Current at... |
375 |
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CategoriesDiscrete Semiconductor ProductsTransistors - IGBTs - ModulesManufacturerInfineon TechnologiesSeries-Part StatusNot For New DesignsIGBT... |
374 |
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Manufacturer :Infineon |
374 |
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ParametricsFF400R12KT3P_EConfigurationCommon EmitterDimensions (width)61.4 mmDimensions (length)106.4 mmFeaturesTIM ; Phase legHousing62... |
373 |
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Manufacturer :Infineon Product :IGBT Silicon Modules Configuration :Dual Collector- Emitter Voltage VCEO Max :3300 V Continuous Collector Current at... |
372 |
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Manufacturer :Infineon |
371 |
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Key Parameters MAXIMUM RATINGS (Tc=25°C) Item Symbol Rated Value ... |
370 |
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CategoriesDiscrete Semiconductor ProductsTransistors - IGBTs - ModulesManufacturerInfineon TechnologiesSeriesCPart StatusActiveIGBT TypeTrench Field... |
369 |
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Manufacturer :Infineon |
368 |
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Manufacturer :Infineon |
367 |
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