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Applications Short circuit withstand time – 10 µsDesigned for: Motor controlsInverter NPT-Technology for 600V applications offers: very... |
130 |
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APPLICATIONS Designed for: Motor controlsInverter NPT-Technology for 600V applications offers: very tight parameter distributionhigh ruggedness,... |
129 |
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KEY FEATURESABSOLUTE MAXIMUM RATINGS (TC=25oC) Item Symbol Unit MDM900E17D Repetitive Peak Reverse VoltageVRRMV1,700Forward... |
129 |
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Key Parameters Absolute Maximum Ratings (T C =25°C) Item Symbol Unit MBM600E17E Collector Emitter Voltage VCES V 1,700 Gate Emitter Voltage... |
129 |
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Manufacturer :Infineon Product Category :IGBT Modules RoHS :No Product :IGBT Silicon Modules Configuration :Half Bridge Module Collector- Emitter... |
129 |
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Key Parameters Absolute Maximum Ratings (TC=25°C) Item Symbol Unit MDM600E45A Repetitive Peak Reverse Voltage VRRM V 4,500 Forward... |
128 |
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Key ParametersMaximum Ratings Parameter Symbol Value Unit Collector-emitter voltage, T j=25 °C V CE60VDC collector current, limited by Tjmax I... |
128 |
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Manufacturer :Infineon Product :IGBT Silicon Modules Configuration :Single Dual Collector Dual Emitter Collector- Emitter Voltage VCEO Max :1700 V... |
128 |
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Applications Short circuit withstand time – 10 µsDesigned for: Motor controlsInverterSMPS NPT-Technology offers: very tight parameter... |
127 |
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Manufacturer :Infineon |
127 |
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Key Parameters Absolute Maximum Ratings (T C =25°C) Item Symbol Unit MBM600E17D Collector Emitter Voltage VCES V 1,700 Gate Emitter Voltage... |
127 |
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Description The Powerex Dual Darlington Transistor Modules are high power devices designed for use in switching applications. The modules are... |
127 |
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KEY PARAMETERS Absolute Maximum Ratings (TC=25°C) Item Symbol Unit MBN600C33A Collector-Emitter VoltageVCESV3,300Gate-Emitter... |
127 |
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Manufacturer :Infineon Product Category :IGBT Modules RoHS :No Product :IGBT Silicon Modules Configuration :Dual Collector- Emitter Voltage VCEO Max... |
126 |
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KEY PARAMETERS Absolute Maximum Ratings (TC=25°C) Item Symbol Unit MDM800H45E2-H Repetitive Peak Reverse VoltageVRRMV4,500Forward CurrentAC... |
126 |
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126 |
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Applications Designed for operation above 30 kHzNPT-Technology for 600V applications offers: parallel switching capability, moderate Eoff... |
125 |
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Key Parameters Absolute Maximum Ratings (T C =25°C) Item Symbol Unit MBN1200H33D Collector Emitter Voltage VCES V 3,300 Gate Emitter Voltage... |
125 |
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Description Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three... |
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Manufacturer :Infineon RoHS : |
125 |
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Description High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode Key ParametersMaximum... |
124 |
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Manufacturer :Infineon |
124 |
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Key Parameters Absolute Maximum Ratings (TC=25°C) Item Symbol Unit MDM300E45A Repetitive Peak Reverse Voltage VRRM V 4,500 Forward... |
124 |
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KEY PARAMETERS Absolute Maximum Ratings (TC=25°C) Items Symbol Unit Value Collector-Emitter VoltageVCESV1200Gate-Emitter... |
123 |
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Key Parameters MAXIMUM RATINGS (Tc=25°C) Item Symbol Rated Value ... |
123 |
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Manufacturer :Infineon Product Category :IGBT Modules RoHS :No Product :IGBT Silicon Modules Configuration :Hex Collector- Emitter Voltage VCEO Max... |
123 |
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KEY PARAMETERSABSOLUTE MAXIMUM RATINGS (TC=25oC)ItemSymbol Unit MDM500H65E2 Repetitive Peak Reverse... |
123 |
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Description HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode Applications SMPSLamp BallastZVS-Converteroptimised for... |
123 |
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CategoryDiscrete Semiconductor ProductsFamilyTransistors - IGBTs - ModulesManufacturerInfineon TechnologiesSeries-Part StatusObsoleteIGBT... |
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122 |
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