Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Key Parameters Thermal and Mechanical Characteristics, T_j = 25 °C unless otherwise specified

Characteristics	Symbol	Test Conditions	Min.	Typ.	Max.	Units
Thermal Resistance, Junction to Case	R_th(j-c)Q	Per IGBT 1/6 Module	–	–	0.21	°C/W
Thermal Resistance, Junction to Case	R_th(j-c)D	Per Free-Wheel Diode 1/6 Module	–	–	0.47	°C/W
Contact Thermal Resistance	R_th(c-f)	Per Module, Thermal Grease Applied	–	0.015	–	°C/W