5SNE-0800M170100 ABB IGBT


  • Model: 5SNE-0800M170100
  • 279 Units in Stock
  • Manufactured by: ABB

Description of 5SNE-0800M170100

Key Parameters

Maximum rated values 1)

Collector-emitter voltageVCESVGE = 0 V, Tvj ≥ 25 °C 1700V
DC collector currentICTc = 80 °C 800A
Peak collector currentICMtp = 1 ms, Tc = 80 °C 1600A
Gate-emitter voltageVGES -20 20V
Total power dissipationPtotTc = 25 °C, per switch (IGBT) 4800W
DC forward currentIF  800A
Peak forward currentIFRM  1600A
Surge currentIFSMVR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave
IGBT short circuit SOAtpsc

VCC = 1200 V, VCEM CHIP≤ 1700 V

VGE  ≤15 V, Tvj ≤ 125 °C

Isolation voltageVisol1 min, f = 50 Hz 4000V
Junction temperatureTvj  150°C
Junction operating temperatureTvj(op) -40125°C
Case temperatureTc -40125°C
Storage temperatureTstg -40125°C

Mounting torques

MsBase-heatsink, M6 screws46Nm

Mounting torques

Mt1Main terminals, M8 screws810Nm

Mounting torques

Mt2Auxiliary terminals, M4 screws23Nm


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