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DIM900ESM45-F Dynex IGBT

DIM900ESM45-F

  • Model: DIM900ESM45-F
  • 333 Units in Stock
  • Manufactured by: Dynex

Description of DIM900ESM45-F

Description

The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 6500V and currents up to 3600A.


The DIM900ESM45-F000 is a single switch 4500V, soft punch through n-channel enhancement mode, insulated
gate bipolar transistor (IGBT) module. The IGBT has a  wide reverse bias safe operating area (RBSOA) plus 10us
short circuit withstand. This device is optimised for traction drives and other applications requiring high
thermal cycling capability.


The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers
to optimise circuit layouts and utilise grounded heat sinks for safety.

Key Parameters

  • VCES  = 4500V
  • VCE(sat) = * (typ) 3.0V
  • IC(max) = 900A
  • IC(PK)(max) = 1800A
  • *(measured at the power busbars and not the auxiliary terminals)


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