Item			Symbol	PCHMB200B12	Unit
Collector-Emitter Voltage			V_CES	600	V
Gate - Emitter Voltage			V_GES	+/- 20	V
Collector Current		DC	I_C	100	A
		1 ms	I_CP	200
Collector Power Dissipation			P_C	400	W
Junction Temperature Range			T_j	-40 to +150	°C
Storage Temperature Range			T_stg	-40 to +125	°C
Isolation Voltage Terminal to Base AC, 1 min.)			V_ISO	2500	V _(RMS)
Mounting Torque	Module Base to Heatsink		F_TOR	2	N•m (kgf•cm)
	Bus Bar to Main Terminals			2 (20.4)

MBN900D45A Hitachi IGBT

MBN900D45A