>

QM50TX-H Mitsubishi IGBT

QM50TX-H

  • Model: QM50TX-H
  • 39 Units in Stock
  • Manufactured by: Mitsubishi

Description of QM50TX-H

Symbol Parameter Conditions Ratings Unit
VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 600 V
VCEX Collector-emitter voltage VEB=2V 600 V
VCBO Collector-base voltage Emitter open 600 V
VEBO Emitter-base voltage Collector open 7 V
IC Collector current DC 50 A
–IC Collector reverse current DC (forward diode current) 50 A
PC Collector dissipation TC=25 C 310 W
IB Base current DC 3 A
–ICSM Surge collector reverse current
(forward diode current)
Peak value of one cycle of 60Hz (half wave) 500 A
Tj Junction temperature   –40~+150 C
Tstg Storage temperature   –40~+125 C
Viso Isolation voltage Charged part to case, AC for 1 minute 2500 V
Mounting torque Main terminal screw M4 0.98~1.47 N·m
10~15 kg·cm
Mounting screw M5 1.47~1.96 N·m
15~20 kg·cm
Weight Typical value 520 g

Request for Quote

Your Name*
Company Name*
Country*
Tel*
Email*
We will not use your email for any purpose other than to communicate with you about the information regarding IGBT Express related activity, we will not provide your email to any third party.
Comments If you're looking for other components, please enter part number, quantity in the comment box, we will find it for you, even if it didn't show in our inventory database
Part Number Quantity
Copyright © 2018 IGBT Express. Powered by IGBT Express, IGBT Express,fast delivered.