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Fuji

Fuji Electric Co.,LTD

Fuji Electric Device technology (FDT) began producing and marketing IGBTs (insulated gate bipolar transistors) in 1988 and has been supplying them to the market ever since. FDT succeeded in enhancing the characteristics of the first three IGBT generations, by using epitaxial wafers, optimizing the lifetime control techniques, and by applying fine patterning technology. The company was able to significantly enhance the characteristics of the fourth and fifth generations by switching from epitaxial wafers to FZ (floating zone) wafers. This achievement brought about a revolutionary transition in conventional approaches to IGBT design.

Fuji IGBT series products

Fuji IGBT Modules PIM
Fuji IGBT Modules 6-Pack
Fuji IGBT Modules 4-Pack
IGBT Modules 2-Pack
Fuji IGBT Modules 1-Pack
Fuji IGBT Modules IPM
Fuji IGBT Discrete

Fuji IGBT Modules now in stock - IGBT Express stocks an extensive and comprehensive line of Fuji igbt modules for most industrial applications - one of hundreds of categories of industrial and electronic products in stock.

Whether you need Fuji igbt modules or something else, IGBT Express should be your first choice for IGBT electronic components. We make it easy to find the exact fuji igbt module you need. 




Product Image Item Name Stock Price-
12MBI100VN-120-50

12MBI100VN-120-50

Insulated Gate Bipolar Transistor
34
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1DI150GE-100

1DI150GE-100

277

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1DI200MA-050

1DI200MA-050

280

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1DI300Z-100

1DI300Z-100

283

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1DI300Z-140

1DI300Z-140

263

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1DI50MA-050

1DI50MA-050

266

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1F60A-120R

1F60A-120R

269

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1MBI200S-120

1MBI200S-120

Manufacturer:  Fuji
2000
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1MBI300S-120

1MBI300S-120

275

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1MBI300S-120

1MBI300S-120

Manufacturer:  Fuji
2000
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1MBI400NN-120

1MBI400NN-120

 Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray...
68

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1MBI400S-120

1MBI400S-120

Manufacturer:  Fuji
2000
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1MBI600PX-120

1MBI600PX-120

Description Device Name: IGBT Module Spec. No.: MS5F 4405 Key Parameters Absolute Maximum Ratings (at Tc=25oC unless otherwise specified) ...
281

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1MBI600PX-140

1MBI600PX-140

284

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1MBI600PX-140-03

1MBI600PX-140-03

286

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1MBI800U4B-120

1MBI800U4B-120

Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES, N-Channel
60
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2DI200M-050

2DI200M-050

289

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2DI30A-140

2DI30A-140

267

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2DI50Z-140

2DI50Z-140

270

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2DI75S-050A

2DI75S-050A

273

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2FI50A-030D

2FI50A-030D

Absolute Maximum Ratings Item Symbol Conditions Rating Unit Repetitive peak reverse voltageVRRM 300VNon-repetitive peak reverse voltageVRSM...
276

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2MBI100F-120

2MBI100F-120

KEY PARAMETERS Absolute Maximum RatingsItemsSymbolsRatingsUnitsCollecter-Emitter VoltageVCES1200VGate-Emitter VoltageVGES±20VCollecter...
279

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2MBI100N-060

2MBI100N-060

Manufacturer:  Fuji
2000
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2MBI100N-120

2MBI100N-120

Maximum Ratings and Characteristics •  Absolute Maximum Ratings    ( T c=25°C ) Items Symbols Ratings Units Collector-Emitter Voltage...
69

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2MBI100N-120

2MBI100N-120

Manufacturer:  Fuji
2000
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2MBI100PC-140

2MBI100PC-140

Insulated Gate Bipolar Transistor, 150A I(C), 1400V V(BR)CES, N-Channel
12
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2MBI100S-120

2MBI100S-120

Manufacturer:  Fuji
2000
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2MBI100SC-120

2MBI100SC-120

Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel
38
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2MBI100U4H-170

2MBI100U4H-170

KEY PARAMETERS Absolute Maximum Ratings (at Tc= 25°C unless otherwise specified)ItemsSymbolsConditionsMaximum RatingsUnitsCollector-Emitter...
282

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2MBI100UA-120

2MBI100UA-120

Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel
34
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New Products For December - Fuji


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