Description of SCP-4979
DESCRIPTION
12000 VOLT, 1.0 AMP, INDUSTRIAL IGBT Solid-state Switch
KEY PARAMETER ELECTRICAL CHARACTERISTICS (AT Tj=25oC UNLESS OTHERWISE SPECIFIED)
| PARAMETER | SYMBOL | CONDITION | MIN | TYP | MAX | UNIT |
Collector-to-Emitter Breakdown Voltage for each one of Q1,2,3,4 | V(BR)CES | VGE=0V,IC=0.5 mA, Tj = 25oC | 2900(1) | - | - | v |
| Collector-to-Emitter Leakage Current | ICES | VGE=0V, VCE=2500V, Tj = 25 oC VCE=2000V, Tj = 125 oC(1) | | - | 0.5 2 | mA |
| Continuous Collector Current | IC | VGE=10V | - | - | 1(2) | A |
| Maximum Pulsed Collector Current, 5μ sec | ICM | TC = 25oC | - | - | 100 | A |
| | | | | | | |
| Gate-Source Threshold Voltage | VGS(th) | VCE = VGE IC = 1mA | 5.0 | - | 7.5 | V |
| Gate Input Capacitance | CISS | VCE = 25V | - | 12.5 | - | nF |
Collector-to-Emitter Saturation Voltage for each one of Q1,2,3,4
| VCEsat | VGE = 15 V, IC = 2.0 A
| - | | 0.8 | V |
Junction to Base Thermal Resistance
| Rthjc |
| | | 1.0 | oC/W |
Nominal Gate-to-Emitter Zener Breakdown Voltage, IZ = 1mA
| VZ | | 17.5 | 18.5 | 19.0 | V |
Series Zener Breakdown Voltage, IZ = 1mA
| VZ | | 11.0 | 11.5 | 12.5 | V |
Operating and Storage Junction Temperature
| Tj | | -40 |
| 100 | oC |
Operating Case Temperature
| Tj | | -40 | | 100 | oC
|
Pin-To-Base plate Voltage Isolation
| VISO | 1 minute, at sea level | | | 10000 | V |
