Product Image |
Item Name |
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Price |
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Manufacturer :IXYS RoHS : Product :IGBT Silicon Modules Configuration :Single Collector- Emitter Voltage VCEO Max :1200 V Continuous Collector... |
299 |
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Manufacturer :IXYS RoHS : Product :IGBT Silicon Modules Configuration :Single Collector- Emitter Voltage VCEO Max :1200 V Continuous Collector... |
300 |
Get a Quote
|
 |
Manufacturer :IXYS RoHS : Product :IGBT Silicon Modules Configuration :Single Collector- Emitter Voltage VCEO Max :1200 V Continuous Collector... |
301 |
Get a Quote
|
 |
Manufacturer :IXYS RoHS : Product :IGBT Silicon Modules Configuration :Single Collector- Emitter Voltage VCEO Max :1200 V Continuous Collector... |
302 |
Get a Quote
|
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Key Parameters Absolute Maximum Ratings, Tj = 25 °C Unless Otherwise SpecifiedSymbolParameterConditionsRatingsUnitVCESCollector-emitter... |
303 |
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304 |
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Description Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge... |
305 |
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|
306 |
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|
307 |
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|
308 |
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|
309 |
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Description M57962L is a hybrid integrated circuit designed for driving n-channel IGBT modules in any gate amplifier application. This device... |
310 |
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Description Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge... |
311 |
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Description Powerex Intellimod-3 Modules are designed applications requiring a high frequency (20kHz) output switching inverter. The modules are... |
312 |
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Description Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge... |
313 |
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|
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Manufacturer :IXYS RoHS : Product :IGBT Silicon Modules Configuration :Quad Collector- Emitter Voltage VCEO Max :600 V Continuous Collector Current... |
314 |
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KEY PARAMETERS ABSOLUTE MAXIMUM RATINGS (Tj=25oC, unless otherwise noted)SymbolParameterConditionsRatingsUnitVCEX (SUS)Collector-emitter... |
315 |
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Description Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to... |
316 |
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|
317 |
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KEY PARAMETERS ABSOLUTE MAXIMUM RATINGS (Tj=25oC, unless otherwise noted)SymbolParameterConditionsRatingsUnitVCEX (SUS)Collector-emitter... |
318 |
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|
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Description Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to... |
319 |
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|
320 |
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KEY PARAMETERS ABSOLUTE MAXIMUM RATINGS (Tj=25oC, unless otherwise noted)SymbolParameterConditionsRatingsUnitVCEX (SUS)Collector-emitter... |
322 |
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|
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|
324 |
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|
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DESCRIPTION Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to... |
325 |
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|
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KEY PARAMETERS ABSOLUTE MAXIMUM RATINGS (Tj=25oC, unless otherwise noted)SymbolParameterConditionsRatingsUnitVCEX (SUS)Collector-emitter... |
327 |
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|
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Insulated Gate Bipolar Transistor, 900A I(C), 1700V V(BR)CES, N-Channel |
328 |

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|
329 |
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|
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KEY PARAMETERS ABSOLUTE MAXIMUM RATINGS (Tj=25oC, unless otherwise noted)SymbolParameterConditionsRatingsUnitVCEX (SUS)Collector-emitter... |
331 |
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|
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600V/50A/PIM - Fuji Electric |
362 |
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