Fuji Electric Device technology (FDT) began producing and marketing IGBTs (insulated gate bipolar transistors) in 1988 and has been supplying them to the market ever since. FDT succeeded in enhancing the characteristics of the first three IGBT generations, by using epitaxial wafers, optimizing the lifetime control techniques, and by applying fine patterning technology. The company was able to significantly enhance the characteristics of the fourth and fifth generations by switching from epitaxial wafers to FZ (floating zone) wafers. This achievement brought about a revolutionary transition in conventional approaches to IGBT design.
Fuji IGBT series products
Fuji IGBT Modules PIM
Fuji IGBT Modules 6-Pack
Fuji IGBT Modules 4-Pack
IGBT Modules 2-Pack
Fuji IGBT Modules 1-Pack
Fuji IGBT Modules IPM
Fuji IGBT Discrete
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